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Phosphorus Doped Poly-Si Passivated Contacts by LPCVD and PECVD for Industrial Large-Area Solar Cells
A. Lanterne, J. Yang, J.C. Loretz, R. Monna, N. Enjalbert, B. Martel, S. Benguesmia, C. Lorfeuvre, C. Denis, S. Dubois
PECVD, LPCVD, Poly Si, Passivated Contact, silicon solar cells
Silicon Materials and Cells
Subtopic: High Temperature Route for Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.54
570 - 573
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2DV.3.54
0,00 EUR
Document(s): paper


This work aims at developing high quality phosphorus (P) doped poly-Si/SiOx structures using massproduction compatible equipment from SEMCO-SMARTECH. The LPCVD and the PECVD techniques were both investigated for the poly-Si deposition, with ex-situ and in-situ doping for the LPCVD approach and an ex-situ doping for the PECVD path. A particular attention was paid to the thin interfacial oxide growth conditions during the formation of the n+ poly-Si/SiOx structures. The possibility to grow blister-free poly-Si layers of 170 nm thick by PECVD with a low operating frequency system was demonstrated. High surface passivation levels of the P doped poly-Si/SiOx structures were demonstrated for all the investigated approaches with iVoc above 735 mV in parralel to low contact resistivity values. The quality of the LPCVD structures was then further highlighted by their integration in high efficiency poly-Si based n-PERT solar cells. The latest optimisations of our process, based on high throuphput equipement, have led to iVoc above 725 mV and solar cell Voc of 702 mV. A maximum efficiency of 23.0% was certified with a full area measurement (244.2 cm2 ), confirming the compliancy of the LPCVD equipment with the industrialization of passivated contact solar cells.