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Potassium-Containing Back Electrode Engineering for High Performance CIGS Solar Cells
M. Simor, M. van der Vleuten, H. 't Mannetje, C.J. Cortes Chitiva, A. Todinova, V.S. Gevaerts, P.J. Bolt
Perovskites and Other Non-Silicon Materials and Devices, Multijunctions/Tandems
Subtopic: CI(G)S, CdTe and Related Thin Films
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.2.12
ISBN: 3-936338-78-7
0,00 EUR
Document(s): poster


Current high performance of CIGS solar cells and modules has been achieved by controlled doping of the CIGS absorber by means of supplying right amounts of various alkali metals in an appropriate manner. As sodium (Na) doping shows the most beneficial effects, it is always incorporated. However, addition of one of the other heavier alkali metals, such as potassium (K), rubidium (Rb) and cesium (Cs) yields a significant improvement in the efficiency [1], up to the current world-record cell-level efficiency of 23.35% [2]. Post-deposition treatment (PDT) is the most studied incorporation strategy. However, supplying alkali metals from an alkali-containing back electrode during the growth of the CIGS absorber represents an interesting alternative to PDT as it involves less processing steps. The aim of the current study is to verify whether a potassium doped molybdenum (MoK) layer within the back electrode could provide CIGS solar cells with a similar performance improvements as PDT counterparts.