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Performance Enhancement of PERC Solar Cell with SiOxNy Back Surface Passivation by Low Temperature Annealing Process
A.E. Keçeci, G. Bektaş, E.H. Çiftpinar, S. Koçak Bütüner, H. Asav, G. Kökbudak, H.H. Canar, B. Arıkan, R. Turan
Silicon Materials and Cells
Subtopic: Characterisation & Simulation of Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.1.14
257 - 260
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2CV.1.14
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Document(s): paper


Phosphorus doped emitter surfaces have been widely passivated by PECVD deposited silicon nitride (SiNx) layers which also act as anti-reflection coating (ARC). However, the following high temperature processes applied in the regular p-based cell fabrication sequences might result in significant degradation in open circuit voltage (Voc) values. In this study, an additional heat treatment called as low temperature annealing (LTA) process after SiNx deposition is applied to improve implied open circuit voltage (iVoc) values of symmetrical p-type samples with symmetrically diffused emitter. Around 15 mV increase in iVoc is obtained with the optimized LTA process conditions for symmetrical samples. We also demonstrate the effect of LTA process on solar cell performance by approximately 10 mV gain in open circuit voltage and approximately 0.5%abs gain in cell efficiency