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Title:
 
Quality Investigation of B-Doped Multicrystalline Silicon Ingot Grown Using Feedstock Intentionally Contaminated with Diamond Powder
 
Author(s):
 
S. Nagashima, M. Dhamrin, S. Suzuki, H. Suzuki, S. Yoshiba, M. Suda, T. Saitoh, K. Kamisako, T. Mori
 
Keywords:
 
Gettering, Multicrystalline-Silicon, Diamond Powder
 
Topic:
 
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Feedstock, Crystallisation and Wafering
Event: 26th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2BV.4.16
 
Pages:
 
1835 - 1838
ISBN: 3-936338-27-2
Paper DOI: 10.4229/26thEUPVSEC2011-2BV.4.16
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


In order to examine the influence of diamond powder impurity on the quality of multicrystalline silicon ingot, 100 ppmw diamond powder was added as additional impurity during the B-doped ingot growth process. Carrier lifetimes around 10 μs were realized in most regions of the ingot after the ingot growth. Metal impurities of the ingot were removed by phosphorus gettering and carrier lifetimes were improved to around 50 μs after H-passivation at the center region of the ingot. The top of the ingot exhibited a p-type to n-type polarity change. Solar cells were fabricated on wafers cut from the diamond powder contaminated B-doped silicon ingot and efficiencies up to14 % were confirmed similarly to a non-contaminated reference cell.