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Quality Evaluation and Improvement of Intentionally Iron Contaminated Boron-Doped Multicrystalline Silicon Ingots
M. Dhamrin, A. Uzum, P. Supajariyawichai, S. Maeda, H. Fukaya, K. Kamisako
Lifetime, Silicon (Si), Iron, p-Type, Multicrystalline-Silicon
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Cells and Materials, Processing Technology of
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 2CV.5.10
1617 - 1620
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-2CV.5.10
0,00 EUR
Document(s): paper


Electronic grade silicon feedstock is used to grow four different ingots with and without 10 [ppmw] iron contents. The effects of iron contamination combined with high and low oxygen contents on the ingot quality are investigated. The ingots grown with oxidized poly silicon shows the highest diffusion length realized in this experiment. While the ingot with non-oxidized poly silicon shows lower diffusion lengths but with better distribution at the top and the bottom of the ingot. Both of the iron contaminated ingots that grown using oxidized and nonoxidized poly silicon shows the same tendency with lower diffusion lengths if compared to the non contaminated ingots. Further improvement were realized after P-gettering due to its strong ability for iron removal from the bulk after diffusion processes reducing iron contents from 1012 [cm-3] before P-diffusion to 1010 [cm-3] after P-diffusion.