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Quality Investigation of Carbon Contaminated B-Doped Multicrystalline Silicon Ingot
N. Ban, M. Dhamrin, S. Suzuki, K. Ogawa, K. Furuichi, H. Suzuki, T. Saitoh, K. Kamisako, T. Mori, N. Iwamoto
Carbon, Gettering, Multicrystalline-Silicon
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Feedstock, Crystallisation and Wafering
Event: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain
Session: 2CV.1.42
1579 - 1582
ISBN: 3-936338-26-4
Paper DOI: 10.4229/25thEUPVSEC2010-2CV.1.42
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Document(s): paper


In this work, to examine the influence of carbon on the quality of multicrystalline silicon ingot, 10 Kg electronic grade silicon was charged with 100 ppma carbon in a SiN-coated silica crucible. The average resistivity of mc-Si ingot was around 1.2 Ω·cm at the center of ingot. Carrier lifetimes around 10 μs were realized after the ingot growth mainly at the center of the carbon contaminated B-doped ingot. Metal impurities of the ingot were removed by phosphorus gettering and carrier lifetimes were improved to reach as high as 100 μs at the center of the ingot. Solar cells were fabricated on wafers cut from the carbon contaminated B-doped silicon ingot and electrical characteristics were measured using solar simulator.