Title:	Reducing LeTID with an Adjustment of the AlOx-SiNy:H Layer System
Author(s):	A. Schmid, C. Fischer, D. Skorka, A. Zuschlag, G. Hahn
Keywords:	Degradation, Diffusion, Hydrogen, Silicon Nitride, AlOx
Topic:	Silicon Materials and Cells
Subtopic:	Feedstock, Crystallisation, Wafering, Defect Engineering
Event:	37th European Photovoltaic Solar Energy Conference and Exhibition
Session:	2AO.5.6
Pages:	156 - 159
ISBN:	3-936338-73-6
Paper DOI:	10.4229/EUPVSEC20202020-2AO.5.6
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

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Light and elevated temperature induced degradation (LeTID) negatively impacts the lifetime and electronic characteristics of silicon (Si) solar cells. Even though the exact underlying mechanism of LeTID and subsequent regeneration are still unknown, LeTID formation seems to depend on the hydrogen content in the Si bulk. In this study, we compare the LeTID and subsequent regeneration behaviour of p-type Cz-Si and mc-Si samples with different AlOx/SiNy:H passivation layer systems under illumination (1 sun) and elevated temperature (130°C). Provided that atomic layer deposited AlOx can serve as diffusion barrier for hydrogen diffusing in the Si bulk from the SiNy:H layer during firing, we are able to change the hydrogen content by adjusting the AlOx layer thickness between 0 and 25 nm. Thus, we are able to show a reduction of LeTID by an adapted processing sequence without any losses in material quality.