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Screen-Printed Aluminium Contacts on n+-Doped Silicon
S. Suzuki, Z.-W. Peng, K. Tsuji, M. Nakahara, N. Morishita, T. Kuroki, A. Adrian, M. Dhamrin, T. Buck
c-Si, Contact, Cost Reduction, Screen Printing
Silicon Materials and Cells
Subtopic: High Temperature Route for Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.36
542 - 544
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2DV.3.36
0,00 EUR
Document(s): paper, poster


In this paper the conditions for forming contacts to n+-Si using a low-cost aluminium (Al) thick film paste material and screen printing technique in combination with conventional high temperature belt furnace sintering were investigated. The test structures feature a tunneling oxide layer below a n+ polycrystalline silicon (poly-Si)/silicon nitride (SiNx) stack. The n+ poly-Si layer was modified resulting in three different surface doping concentrations (ND). After line-shaped laser contact openings (LCOs), the Al paste was printed in a grid pattern on top of the LCOs and fired with various temperature settings. Thereafter, the contact resistivity (c) for each variation was measured by TLM. As a result, it was confirmed that the c is greatly affected by ND. In the same time, it was found that the peak firing temperature has less impact on the c than ND. However, J0, Met of the lowest c sample was high for a passivated contact. In addition, screen-printed Al metallisation on both sides of a n-PERT front junction solar cell was fabricated and characterized.