login

Search documents

Browse topics

Document details

 
Title:
 
Silicon Wafers with a Thickness below 130-Micrometers in Mass Production of Heterojunction Solar Cells
 
Author(s):
 
I. Nyapshaev, K. Emtsev, D. Andronikov, A. Abramov, A. Ivanov, V. Tarasov, D. Saykin, A. Dubrovskiy, P. Ishmuratov, I. Shakhray
 
Keywords:
 
Testing, Wafer Thickness, Mechanical Load, HJT, Production
 
Topic:
 
Silicon Materials and Cells
Subtopic: Low Temperature Route for Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.24
 
Pages:
 
529 - 531
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2DV.3.24
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


In present work, we investigate the possibility to reduce wafer thickness to less than 130 mkm in mass production of Si-HJT cell and modules. It is shown that thinning leads to reduction of the Isc current by 0.1 A and increase of the Voc by about 2-3 mV as compared to the standard wafer thickness. This reduces the overall cell efficiency by about 0.2%abs. At the same time, on the module level, use of thinner wafers leads to power gain of about 1%. We show that that glassglass HJT modules technology are preferred over glass-backsheet when using wafers less than 130 mkm thick in terms of mechanical and climatic stability.