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Stable Reverse Bias or Integrated Bypass Diode in HIP-MWT+ Solar Cells Based on Different Industrial Rear Passivation
T. Schweigstill, A. Spribille, J.D. Huyeng, F. Clement, S.W. Glunz
Back Contact, Passivation, Silicon Solar Cell(s), PERC, MWT Solar Cell
Silicon Materials and Cells
Subtopic: Characterisation & Simulation of Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CO.10.2
177 - 180
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2CO.10.2
0,00 EUR
Document(s): paper


The Metal Wrap Through+ (HIP-MWT+) solar cell is based on the PERC concept but features two additional electrical contacts, namely the Schottky contact between p-type Si bulk and Ag n-contact and the metal-insulator-semiconductor (MIS) contact on the rear side of the cell below the n-contact pads. To prevent hotspots under reverse bias, both contacts shall either restrict current flow or allow a homogenous current flow at low voltage. In this work we present both options. First the stable reverse bias characteristics up to – 15 V with a MIS contact using industrially manufactured SiON passivation and second, an integrated by-pass diode using AlOX as insulator in the passivation stack allowing current flows at approximately Vrev = – 3.5 V depending on the chosen screen-print paste. The examined Schottky contacts break down at around Vrev = – 2.5 V. Reverse bias testing of the cells proof a solid performance of the cells under reverse bias and an average conversion efficiency of = 21.2 % (AlOX) and = 20.7 % (SiON), respectively.