Title:	Stable Reverse Bias or Integrated Bypass Diode in HIP-MWT+ Solar Cells Based on Different Industrial Rear Passivation
Author(s):	T. Schweigstill, A. Spribille, J.D. Huyeng, F. Clement, S.W. Glunz
Keywords:	Back Contact, Passivation, Silicon Solar Cell(s), PERC, MWT Solar Cell
Topic:	Silicon Materials and Cells
Subtopic:	Characterisation & Simulation of Si Cells
Event:	38th European Photovoltaic Solar Energy Conference and Exhibition
Session:	2CO.10.2
Pages:	177 - 180
ISBN:	3-936338-78-7
Paper DOI:	10.4229/EUPVSEC20212021-2CO.10.2
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

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The Metal Wrap Through+ (HIP-MWT+) solar cell is based on the PERC concept but features two additional electrical contacts, namely the Schottky contact between p-type Si bulk and Ag n-contact and the metal-insulator-semiconductor (MIS) contact on the rear side of the cell below the n-contact pads. To prevent hotspots under reverse bias, both contacts shall either restrict current flow or allow a homogenous current flow at low voltage. In this work we present both options. First the stable reverse bias characteristics up to – 15 V with a MIS contact using industrially manufactured SiON passivation and second, an integrated by-pass diode using AlOX as insulator in the passivation stack allowing current flows at approximately Vrev = – 3.5 V depending on the chosen screen-print paste. The examined Schottky contacts break down at around Vrev = – 2.5 V. Reverse bias testing of the cells proof a solid performance of the cells under reverse bias and an average conversion efficiency of = 21.2 % (AlOX) and = 20.7 % (SiON), respectively.