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Title:
 
Thermodynamic Simulation of Growth Conditions of Cu2SnS3 Used as Precursor of Cu2ZnSnS4 Thin Films Deposited Using a Solution Based Chemical Route
 
Author(s):
 
G. Gordillo, J.M. Correa, R.A. Becerra
 
Keywords:
 
Cu2ZnSnS4, Thin Film (TF), Diffusion Membranes Assisted CBD, Chemical Equilibrium, Cu2SnS3, Thermodinamic Simulation
 
Topic:
 
THIN FILM SOLAR CELLS
Subtopic: CdTe, CIS and Related Ternary and Quaternary Thin Film Solar Cells
Event: 29th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3DV.1.1
 
Pages:
 
1692 - 1696
ISBN: 3-936338-34-5
Paper DOI: 10.4229/EUPVSEC20142014-3DV.1.1
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


This paper present a method for growing thin films of Cu2ZnSnS4 (CZTS) consisting in sequential deposition of Cu2SnS3 (CTS) and ZnS thin films prepared using a solution-based chemical route, where the CTS compound is prepared using a novel procedure consisting of simultaneous precipitation of Cu2S and SnS2 performed by diffusion membranes assisted CBD technique and ZnS by conventional CBD technique. As the conditions in terms of concentration of metal species, sulphide anion and temperature required for the formation of the Cu2SnS3 compound have not yet been reported by other authors, in this paper we propose a way to achieve these, through a study of the chemical equilibrium of the system SnCl2, Na3C6H5O7·2H2O, CuCl2 and Na2S2O3·5H2O. These conditions were obtained solving the equilibrium equations with the help of the Visual MINTEQ 3.0 package, supported on the program MINTEQA2. X-ray diffraction (XRD) and Raman spectroscopy measurements were used to confirm the formation of the Cu2ZnSnS4 phase.