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Title:
 
The Effect of Front Side Amouphous Silicon Layer Thickness on Rear Emitter Heterojunction Solar Cells
 
Author(s):
 
M.Y. Chen, J. Chang, F.-S. Chen, W.-C. Shieh, Z.-Y. Shih
 
Keywords:
 
Heterojunction, Solar Cell, Rear Emitter
 
Topic:
 
WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Subtopic: Silicon Solar Cell Improvements
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 2AV.2.11
 
Pages:
 
645 - 647
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-2AV.2.11
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


Silicon heterojunction (SHJ) solar cell have potential to achieve high efficiencies and rear emitter SHJ solar cell structure was more widely studied. We reported that the effect of n-type hydrogenated amorphous silicon (n a-Si:H) and intrinsic hydrogenated amorphous silicon (i a-Si:H) layer thickness on SHJ solar cell. Minority carrier life time (MCLT) and implied Voc increase with increasing n a-Si:H layer thickness or i a-Si:H layer thickness. Based on MCLT data, surface passivation quality is stronger correlated to i a-Si:H layer thickness rather than n a-Si:H layer thickness. The result show that open-circuit voltage (Voc) increases, whereas fill factor (FF) and short-circuit current density (Jsc) reduces with increasing i a-Si:H layer thickness. The highest cell efficiency can be achieved by optimizing i a-Si:H layer thickness. While n a-Si:H layer thickness is too thin, Voc, Jsc and FF will obviously drop. Comparing with rear emitter SHJ solar cell to front emitter SHJ solar cell, rear emitter SHJ solar cell shows higher efficiency due to higher Jsc and fill factor FF.