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Title:
 
The Influence of the Exciton Nonradiative Recombination in Silicon on the Photoconversion Efficiency
 
Author(s):
 
A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, I.O. Sokolovskyi, M. Evstigneev
 
Keywords:
 
Recombination, Silicon Solar Cell(s), Exciton Recombination
 
Topic:
 
New Materials and Concepts for Solar Cells and Modules
Subtopic: Fundamental Studies
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 1BV.5.14
 
Pages:
 
141 - 147
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-1BV.5.14
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it is shown that a new recombination channel becomes operative when Shockley- Read-Hall lifetime is below 20 ms and the density of doping impurities or the excess electron-hole pair density is of the order of 1016 cm-3. This recombination mechanism is related to the non-radiative exciton Auger recombination assisted by the deep impurities in the bulk. The influence of non-radiative exciton recombination on the photoconversion efficiency in solar cells is analyzed. It is shown that the shorter the Shockley-Read-Hall lifetime, SRH, the stronger its effect. In particular, for SRH = 100 μs, this recombination channel leads to the reduction of photoconversion efficiency by 5.5 %, whereas for SRH ≈ 1 μs, the photoconversion efficiency is about twice as small as the value obtained without taking non-radiative exciton recombination into account.