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The Influence of the Exciton Nonradiative Recombination in Silicon on the Photoconversion Efficiency
A.V. Sachenko, V.P. Kostylyov, V.M. Vlasiuk, I.O. Sokolovskyi, M. Evstigneev
Recombination, Silicon Solar Cell(s), Exciton Recombination
New Materials and Concepts for Solar Cells and Modules
Subtopic: Fundamental Studies
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 1BV.5.14
141 - 147
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-1BV.5.14
0,00 EUR
Document(s): paper, poster


By comparison of the experimental dependence of bulk lifetime in silicon on the doping and excitation levels with theoretical calculations, it is shown that a new recombination channel becomes operative when Shockley- Read-Hall lifetime is below 20 ms and the density of doping impurities or the excess electron-hole pair density is of the order of 1016 cm-3. This recombination mechanism is related to the non-radiative exciton Auger recombination assisted by the deep impurities in the bulk. The influence of non-radiative exciton recombination on the photoconversion efficiency in solar cells is analyzed. It is shown that the shorter the Shockley-Read-Hall lifetime, SRH, the stronger its effect. In particular, for SRH = 100 μs, this recombination channel leads to the reduction of photoconversion efficiency by 5.5 %, whereas for SRH ≈ 1 μs, the photoconversion efficiency is about twice as small as the value obtained without taking non-radiative exciton recombination into account.