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The Effect Of Doping Profile On Contact Resistivity Between Screen Printed Ag/Al And Implanted Boron Emitter
E. Özmen, S. Seyrek, G. Bektaş, H.H. Canar, S. Koçak Bütüner, H. Asav, A.E. Keçeci, R. Turan
Screen Printing, Contact Resistivity, Boron, Ion Implantation
Silicon Materials and Cells
Subtopic: Characterisation & Simulation of Si Cells
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.1.21
268 - 270
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-2CV.1.21
0,00 EUR
Document(s): paper


In this work, the contact resistivity between fire through metal contacts and boron implanted n-type textured silicon wafer with various doping profiles is studied. The metal contacts are screen printed on boron emitter passivated with l2O3/SiNx stack and subsequently underwent a fast-firing process by a conveyor belt furnace. Electrochemical capacitance-voltage (ECV) measurements show that increasing the activation temperature and time results in a decrease in dopant peak concentration and a deeper junction. The contact resistivity has generally shown a decreasing trend in TLM results as the activation temperature and duration increase due to the increasing junction depth. The sample activated at 1050 for 60 minutes shows a slight increase in contact resistivity which may be caused by decreased surface doping concentration. The lowest contact resistivity is measured as 1.4 m. cm2 for the emitter activated at 1050 for 30 minutes.