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Understanding of Shunting Mechanism in the Crystalline Silicon Solar Cell
Y.-W. Choi, H.J. Jung, D. Song, E.K. Kim, S. Kim, K. Okamoto
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Solar Cell Characterisation and Modelling
Event: 26th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2BV.2.23
1471 - 1473
ISBN: 3-936338-27-2
Paper DOI: 10.4229/26thEUPVSEC2011-2BV.2.23
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P-N junction quality was investigated with the control of firing condition and material design. The large size and high number of Ag crystallites were observed at the glass/Si interface with higher PbO content glass frit, however, the ideality factor, n, which indicates junction quality was high and did not show the clear n difference region with voltage. On the other hand, nano-sized Ag or metal precipitates were more observed in glass layer with higher ZnO contents. The ideality factor became lower with ZnO contents and showed clear n difference with voltage. It seems that ZnO acts as impurities, so that the sizes of Ag crystallite and precipitates were reduced. As a result of size reduction Ag crystallites at the glass/Si interfaces, P-N junction quality was improved.