Search documents

Browse topics

Document details

Using Solid Phase Epitaxial Re-Growth for Ion Implantation in Solar Cell Fabrications
M. Chun, B. Adibi, H. Hieslmair, L. Mandrell
Defects, Ion Implantation, Solid Phase Epitaxial Re-Growth, Implant Damage
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Solar Cell Improvements
Event: 26th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2BV.1.25
1293 - 1296
ISBN: 3-936338-27-2
Paper DOI: 10.4229/26thEUPVSEC2011-2BV.1.25
0,00 EUR
Document(s): paper


In contrast to the conventional beamline ion implantation techniques, Intevac ENERGi implanter utilizes the continuous flux ion implantation technique which enhances the implant-induced damage accumulation. In this paper, defect-free recrystallization of amorphous layer which was first created by the continuous flux ion implantation was demonstrated. Electrical activation and defect annealing data indicate the possibility of reducing the thermal budget required for the traditional beam ion implantation techniques in post-implant damage anneal and dopant activation. Using its high dose rate and by taking advantage of the benefits of solid phase epitaxial re-growth (SPER) phenomenon, it was demonstrated the cost of silicon-based solar cell manufacturing processes can be significantly reduced with the high wafer throughput and possibly reduce the need for the subsequent furnace annealing step in dopant activation and implant damage anneal.