Title:	Using PECVD Large Area System with Electrical Asymmetry Effect for Passivation of Si Wafers
Author(s):	D. Hrunski, A. Janssen, T. Fritz, D. Gross, B.-M. Meiners, D. Borchert, G. Grabosch
Keywords:	PECVD, Solar Cell, Thin Silicon Films
Topic:	WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Subtopic:	Silicon Solar Cell Improvements
Event:	28th European Photovoltaic Solar Energy Conference and Exhibition
Session:	2DV.4.13
Pages:	2020 - 2023
ISBN:	3-936338-33-7
Paper DOI:	10.4229/28thEUPVSEC2013-2DV.4.13
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

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The influence of the deposition conditions for the Electrical Assymetry Effect (EAE) technique on the passivation quality of the interface between commercial grade Czochralski (CZ) and thin silicon films was investigated. It has been shown that the EAE allows increasing significantly lifetimes of minority carriers (above 25%) by controlling silane containing plasma properties during thin silicon film deposition. The results obtained in large scale PECVD reactor (Gen 5) are presented in this paper. A combination of the excitation frequencies 13.56 MHz + 27.12 MHz was used. The self bias voltage on the live electrode has a strong influence on film quality. Additional evidence is provided that by help of EAE the ion energy and ions flow towards the substrate could be controlled.