Title:	Ultrathin Heterojunction a-Si:H Solar Cell Design with No Doped a-Si:H Layers
Author(s):	E. Ore, G. Amaratunga
Keywords:	Heterojunction, Solar Cell, a-Si:H, Thin Film (TF)
Topic:	THIN FILM SOLAR CELLS
Subtopic:	Silicon-based Thin Film Solar Cells
Event:	29th European Photovoltaic Solar Energy Conference and Exhibition
Session:	3CV.1.28
Pages:	1671 - 1672
ISBN:	3-936338-34-5
Paper DOI:	10.4229/EUPVSEC20142014-3CV.1.28
Price:	0,00 EUR
Document(s):	paper, poster

Abstract/Summary:

---

Ultrathin heterojunction a-Si:H solar cell structures that eliminate the use of the p- and n-doped a-Si:H layers of the conventional single junction p-i-n a-Si:H solar cell are investigated. In each of these cell structures, a 100 nm thick intrinsic a-Si:H layer is used as the absorption layer. The cell with the structure of glass / ITO / MoO3 / intrinsic a-Si:H / LiF / Al has the best efficiency at 5.01% and the cell with the structure of glass / ITO / PEDOT:PSS / Cu2O / intrinsic a-Si:H / LiF / Al has the highest short circuit density at 12.75 mA/cm2. These ultrathin a-Si:H cell designs reduce the use of silane and the bulk gasses, compared to a conventional single junction p-i-n a-Si:H solar cell with 100 nm thick absorption layer. Furthermore, these cell designs eliminate the need to use the costly, complex multi-chamber amorphous silicon deposition systems and the toxic dopant gases for a-Si:H; therefore making the cell manufacturing process safer and potentially cheaper.