login

Search documents

Browse topics

Document details

 
Title:
 
Ultrathin Heterojunction a-Si:H Solar Cell Design with No Doped a-Si:H Layers
 
Author(s):
 
E. Ore, G. Amaratunga
 
Keywords:
 
Heterojunction, Solar Cell, a-Si:H, Thin Film (TF)
 
Topic:
 
THIN FILM SOLAR CELLS
Subtopic: Silicon-based Thin Film Solar Cells
Event: 29th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3CV.1.28
 
Pages:
 
1671 - 1672
ISBN: 3-936338-34-5
Paper DOI: 10.4229/EUPVSEC20142014-3CV.1.28
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


Ultrathin heterojunction a-Si:H solar cell structures that eliminate the use of the p- and n-doped a-Si:H layers of the conventional single junction p-i-n a-Si:H solar cell are investigated. In each of these cell structures, a 100 nm thick intrinsic a-Si:H layer is used as the absorption layer. The cell with the structure of glass / ITO / MoO3 / intrinsic a-Si:H / LiF / Al has the best efficiency at 5.01% and the cell with the structure of glass / ITO / PEDOT:PSS / Cu2O / intrinsic a-Si:H / LiF / Al has the highest short circuit density at 12.75 mA/cm2. These ultrathin a-Si:H cell designs reduce the use of silane and the bulk gasses, compared to a conventional single junction p-i-n a-Si:H solar cell with 100 nm thick absorption layer. Furthermore, these cell designs eliminate the need to use the costly, complex multi-chamber amorphous silicon deposition systems and the toxic dopant gases for a-Si:H; therefore making the cell manufacturing process safer and potentially cheaper.