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Ultra-Thin Silicon Solar Cell: Flexibility, Modeling and Prediction
J. Han, M. Abbott, P. Hamer, B. Hoex, A. Lochtefeld, A. Barnett
Flexible Substrate, Modeling
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Solar Cell Characterisation and Modelling
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2BV.7.6
879 - 882
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-2BV.7.6
0,00 EUR
Document(s): paper


Silicon solar cells with reduced thickness have the potential to achieve higher open circuit voltages (VOC) due to reduction in intrinsic recombination in the bulk region. At UNSW Australia, the ultra-thin silicon on steel (UTSi) solar cell developed is based on epitaxial growth on porous silicon. Efficiencies of 16.8% on 4 cm2 devices and 15.9% on 90 cm2 devices have been demonstrated, both with an active layer thickness of less than 20 μm. In this paper, a three-dimensional cell model is developed to accurately simulate an UTSi cell with a confirmed efficiency of 15.9%. This model determines the unknown J0.rear component of the device. The cause and magnitude of various losses in the device is then calculated, followed by performance predictions when these losses are minimized using available technologies. The model predicts this device can reach 20.4% efficiency with readily available technologies, and is capable of achieving 22.2% efficiency. The UTSi device also demonstrates excellent flexibility, and is very robust against mechanical movements. The degree of damage caused by such physical impairment was quantitatively investigated in this paper.