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Upgrade of an Industrial Al-BSF Solar Cell Line into PERC Using 3600 Wafers/Hour ALD Al2O3+SiNx Solution Ramp-Up
F. Souren, B. Dielissen, X. Gay, R. Görtzen, P.R. Venema, M.R. Renes, J.R.M. Luchies
Manufacturing and Processing, PECVD, Al2O3, ALD, PERC
Silicon Photovoltaics
Subtopic: Manufacturing & Production
Event: 33rd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.2.79
967 - 969
ISBN: 3-936338-47-7
Paper DOI: 10.4229/EUPVSEC20172017-2CV.2.79
0,00 EUR
Document(s): paper, poster


In this paper, we present the results of the upgrade of a standard monocrystalline Aluminum Back Surface Field (Al-BSF) solar cell line to a passivated emitter and rear cell (PERC) solar cell line and ramp-up. Three additional process steps are added: spatial ALD Al2O3 using SoLayTec’s InPassion ALD, rear side SiNx capping layer deposited by a direct plasma system, using e.g. Tempress’ SPECTRUM, and a laser to open the rear side dielectric layers, using a conventional laser system. The Al2O3 post-deposition anneal is integrated into the SiNx capping layer deposition process. Besides a good PERC solar cell efficiency, also the wafer appearance of these solar cells is essential. The wafer appearance is a combination of scratches, marks and hazing. In this work, the wafer appearance is improved by optimization of the TMA consumption and the temperature of the integrated-Anneal SiNx (iA-SiNx) rear side capping recipe while maintaining the solar cell efficiency. Further adjustments are made in order to improve the throughput and reliability of the equipment. This results in a PERC process with a high solar cell efficiency, good wafer appearance and a throughput above 3600 wafers/hour.