Title:	Understanding Contact Formation on n-PERT-RJ Solar Cells
Author(s):	C. Comparotto, J. Theobald, J. Lossen, V.D. Mihailetchi
Keywords:	Photoluminescence, Recombination, Silicon Solar Cell(s), n-Type, Metallization
Topic:	Silicon Photovoltaics
Subtopic:	Characterisation & Simulation Methods
Event:	33rd European Photovoltaic Solar Energy Conference and Exhibition
Session:	2CV.2.23
Pages:	832 - 836
ISBN:	3-936338-47-7
Paper DOI:	10.4229/EUPVSEC20172017-2CV.2.23
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

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In this work we investigated the metallization process of screen-printed n-type passivated emitter rear totally diffused (n-PERT) rear junction (RJ) silicon solar cells. We used the voltage calibrated photoluminescence (PL) method to extract the saturation current density on the laser ablated surface before metallization (J0-abl) and at the metal-silicon interface after metallization (J0-met). Symmetrically diffused and passivated test samples, printed with specific metallization patterns, were fabricated for this purpose. We investigated the influence on J0-met varying boron (p+) and phosphorous (n+) diffusions, cleaning after laser ablation, metal pastes and peak firing temperature. The optimum parameters were then applied to fabricate n-PERT-RJ cells.