login

Search documents

Browse topics

Document details

 
Title:
 
Understanding Contact Formation on n-PERT-RJ Solar Cells
 
Author(s):
 
C. Comparotto, J. Theobald, J. Lossen, V.D. Mihailetchi
 
Keywords:
 
Photoluminescence, Recombination, Silicon Solar Cell(s), n-Type, Metallization
 
Topic:
 
Silicon Photovoltaics
Subtopic: Characterisation & Simulation Methods
Event: 33rd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.2.23
 
Pages:
 
832 - 836
ISBN: 3-936338-47-7
Paper DOI: 10.4229/EUPVSEC20172017-2CV.2.23
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


In this work we investigated the metallization process of screen-printed n-type passivated emitter rear totally diffused (n-PERT) rear junction (RJ) silicon solar cells. We used the voltage calibrated photoluminescence (PL) method to extract the saturation current density on the laser ablated surface before metallization (J0-abl) and at the metal-silicon interface after metallization (J0-met). Symmetrically diffused and passivated test samples, printed with specific metallization patterns, were fabricated for this purpose. We investigated the influence on J0-met varying boron (p+) and phosphorous (n+) diffusions, cleaning after laser ablation, metal pastes and peak firing temperature. The optimum parameters were then applied to fabricate n-PERT-RJ cells.