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Ultrafast In-Line Capable Regeneration Process for Preventing Light Induced Degradation of Boron-Doped p-Type Cz-Silicon Perc Solar Cells
A.A. Brand, K. Krauß, P. Wild, S. Schörner, S. Gutscher, S. Roder, S. Rein, J. Nekarda
Annealing, Regeneration, Stabilization, LID
Silicon Photovoltaics
Subtopic: Manufacturing & Production
Event: 33rd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CO.9.5
382 - 387
ISBN: 3-936338-47-7
Paper DOI: 10.4229/EUPVSEC20172017-2CO.9.5
0,00 EUR
Document(s): paper


Solar cells based on boron-doped p-type Czochralski-grown silicon (Cz-Si) substrates suffer from light-induced degradation (LID) which is related to a metastable boron-oxygen defect and limits the achievable cell efficiency significantly, but can be eliminated by carrier injection at elevated temperatures within a so-called regeneration process. We have developed an ultrafast regeneration process (UFR) to prevent up to 98% of the LID effect in less than 4 seconds process-time. The technology behind this process has been implemented in an in-line prototype tool with belt speeds of up to 8000 mm/min. Compared to competing techniques the technology introduced here enables tools with smaller footprint and broader process window, offering irradiation intensities up to 1 MW/m² and temporal and spatial modulation of the irradiation intensity with up to 100 Hz. Undistorted in-situ temperature measurements can be acquired via commercially available thermographic imaging equipment. Further, we introduce a new parameter called regeneration completeness in order to allow benchmarking for BO-regeneration processes. It quantifies the effectiveness of BO-regeneration processes independent of the overall efficiency in order to allow a direct comparison of the quality of different regeneration processes.