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Use of Liquid Precursor TMS for Deposition of Antireflective and Passivating a-SiC(N):H Thin Films with Low Pressure/Low Frequency PECVD
A. Cojocaru, S. Quoizola, J. Larrieu, A. Soum-Glaude, F. Massines, L. Thomas
Anti-Reflection Coating, PECVD, Silicon Carbide Nitride
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Materials and Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 2CV.2.55
1617 - 1622
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-2CV.2.55
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Document(s): paper


Hydrogenated silicon carbide and silicon carbide nitride are widely studied for their good antireflective and passivating properties on both p-type and n-type crystalline silicon-based solar cells. Such materials are mainly prepared by PECVD processes using silane-hydrocarbon mixtures such as SiH4/CH4. We report the use of tetramethylsilane (TMS), a friendly-use and chemically stable liquid precursor, as a possible alternative to the wellknown dangerous and pyrophoric silane. The first aim of this work is to show the feasibility of TMS to obtain thermally stable thin layers with good antireflective properties for industrial photovoltaic applications. Deposition rate and optical properties of the films are determined by spectroscopic ellipsometry. Results are discussed as a function of the plasma composition and parameters and are correlated to the layer composition determined by FTIR spectroscopy. The surface passivation quality on crystalline FZ silicon wafers is determined by the quasi steady-state photoconductance decay (QSSPC) technique. The process leads to the deposition of homogeneous, adhesive and thermally stable layers with high growth rate (up to 70 nm/mn) and a wide range of optical index (1.6 – 2.8). However, the films do not present good passivation properties. Further understanding and optimisation is necessary.