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Up-Scaling of High Throughput a-Si Solar Cell Design on ZnO to 1.4m2 Modules
O. Kluth, P. Losio, S. Bakehe, O. Caglar, H. Goldbach, M. Keller, S. Benagli, J. Meier
Thin Films Solar Cells
Subtopic: Amorphous and Microcrystalline Silicon Solar Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 3AV.2.47
2715 - 2717
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-3AV.2.47
0,00 EUR
Document(s): paper


This work reports on the development of a new economically attractive a-Si process with high efficiency on LPCVD ZnO. It comprises an amorphous p-layer and a modified single chamber process for improved interfaces. A 1cm2 a-Si record cell with 11.0% initial efficiency was obtained at about four times reduced process time for the p-layer deposition compared to the commonly used μc-Si/a-Si double p-layer. The high FF and Voc together with a low series resistance demonstrate the excellent quality of the LPCVD ZnO/a-Si p contact. The new a-Si process was successfully up-scaled to 1.4 m2 modules yielding 10.3% initial active area efficiency for a a-Si module and 11.1% initial active area efficiency for a a-Si/μc-Si module.