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Title:
 
Understanding the Origins of P1-Induced Power Losses in CIGS Modules through High-Resolution Hyperspectral Luminescence
 
Author(s):
 
C.O. Ramírez Quiroz , L.-I. Dion-Bertrand, C.J. Brabec, J. Müller, K. Orgassa
 
Topic:
 
New Materials and Concepts for Photovoltaic Devices
Subtopic: Fundamental Studies
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 1BV.4.15
ISBN: 3-936338-73-6
 
Price:
 
 
0,00 EUR
 
Document(s): poster
 

Abstract/Summary:


Localized-excitation analysis is commonly used for the selection and optimization of the laser ablation processes used for the patterning interconnection of sub-cells on Cu(Inx,Ga1–x)Se2 (CIGS) modules. A fundamental drawback arises from the fact that charge carrier transport will occur away from the excitation point. As a consequence, it is often necessary to measure under conditions that differ from those expected to be seen during the standard operation of the solar cell. Here, we introduce hyperspectral high-resolution photoluminescence (HR-PL) mapping as a powerful tool for the in-depth monitoring of material degradation in the vicinity of the ablation region and the identification of the underlying potential power-loss mechanisms, specifically on the P1-line before and after the deposition of the CIGS active layer.