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Use of Linear Correlation Coefficients in the Analysis of Carrier Density Imaging Recombination Lifetime Maps
E. Cornagliotti, J. John, J. Poortmans, R. Mertens
Lifetime, Free-Carrier Absorption, Correlation Coefficient
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Materials and Cells
Event: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain
Session: 2DV.1.73
2649 - 2653
ISBN: 3-936338-26-4
Paper DOI: 10.4229/25thEUPVSEC2010-2DV.1.73
0,00 EUR
Document(s): paper


We propose an analytical study of recombination lifetime maps obtained with lock-in Carrier Density Imaging technique. Recombination lifetime maps obtained from the amplitude output (A-) are put in correlation with lifetime maps obtained from phase output (F-) and with real-time maps. The latter encompass the effects of surface morphology and lateral doping variation on the absorption/emission of the mid-infrared radiation (MIR, l=1.5~5 μm) used as detection principle. We use the Carrier Density Imaging setup in absorption mode and the quantifier we adopt is the Pearson (linear) correlation coefficient r. Analysis of the local r maps suggests that strong negative correlation is associated to the surface morphology artifacts present in A- maps, while areas of strong positive correlation can be associated with lateral doping variations, which have a direct impact on the local effective lifetime.