login

Search documents

Browse topics

Document details

 
Title:
 
Very High Deposition Rate µc-Si:H Absorber Layer Deposition Using a Plasma Excitation Frequency of 140 MHz in Combination with High Process Pressures
 
Author(s):
 
C. Strobel, U. Merkel, B. Leszczynska, S. Leszczynski, J. Kuske, M. Albert, J.W. Bartha
 
Keywords:
 
PECVD, Solar Cell, High Rate, Microcrystalline Silicon, Very High Frequency
 
Topic:
 
THIN FILM SOLAR CELLS
Subtopic: Silicon-based Thin Film Solar Cells
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3CV.1.52
 
Pages:
 
2573 - 2579
ISBN: 3-936338-33-7
Paper DOI: 10.4229/28thEUPVSEC2013-3CV.1.52
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


The cost reduction of silicon based thin-film solar cells is of major importance in terms of the competitiveness of the technology. One major cost factor is the absorber layer deposition of the microcrystalline silicon (μc-Si:H) bottom cell of tandem devices. In this work results of the ultra fast μc-Si:H absorber layer deposition are described. To achieve the high deposition rates a plasma regime which combines high pressures and high power levels at an electrode distance of 10 mm and at a plasma excitation frequency of 140 MHz is used. At the beginning a μc-Si:H p-i-n reference process at moderate i-layer deposition rates (0.8 nm/s) was developed. After several optimization steps an efficiency of 8.3 % could be achieved (0.8 nm/s). In the next step the deposition rate of the absorber was increased up to 5 nm/s. Promising i-layer material with rates up to about 2.1 nm/s was incorporated into complete μc-Si:H p-i-n solar cells. A slight decrease of the solar cell parameters , FF, Uoc and Jsc was observed with increasing absorber deposition rate. Finally, an initial efficiency of 6.9 % could be achieved at an absorber layer deposition rate of 2.1 nm/s.