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Very High Deposition Rate µc-Si:H Absorber Layer Deposition Using a Plasma Excitation Frequency of 140 MHz in Combination with High Process Pressures
C. Strobel, U. Merkel, B. Leszczynska, S. Leszczynski, J. Kuske, M. Albert, J.W. Bartha
PECVD, Solar Cell, High Rate, Microcrystalline Silicon, Very High Frequency
Subtopic: Silicon-based Thin Film Solar Cells
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3CV.1.52
2573 - 2579
ISBN: 3-936338-33-7
Paper DOI: 10.4229/28thEUPVSEC2013-3CV.1.52
0,00 EUR
Document(s): paper


The cost reduction of silicon based thin-film solar cells is of major importance in terms of the competitiveness of the technology. One major cost factor is the absorber layer deposition of the microcrystalline silicon (μc-Si:H) bottom cell of tandem devices. In this work results of the ultra fast μc-Si:H absorber layer deposition are described. To achieve the high deposition rates a plasma regime which combines high pressures and high power levels at an electrode distance of 10 mm and at a plasma excitation frequency of 140 MHz is used. At the beginning a μc-Si:H p-i-n reference process at moderate i-layer deposition rates (0.8 nm/s) was developed. After several optimization steps an efficiency of 8.3 % could be achieved (0.8 nm/s). In the next step the deposition rate of the absorber was increased up to 5 nm/s. Promising i-layer material with rates up to about 2.1 nm/s was incorporated into complete μc-Si:H p-i-n solar cells. A slight decrease of the solar cell parameters , FF, Uoc and Jsc was observed with increasing absorber deposition rate. Finally, an initial efficiency of 6.9 % could be achieved at an absorber layer deposition rate of 2.1 nm/s.