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Wide-Bandgap CuAlSe2 Thin Films Deposited on ATO Substrates
J. López-García, J. Montero, C. Maffiotte, C. Guillén, J. Herrero
Chalcopyrite, Transparent Conducting Oxides (TCO), Thin Film (TF), CIS, Crystallisation, Crystallization
Thin Film Solar Cells
Subtopic: CIS and Related Ternary and Quaternary Thin Film Solar Cells
Event: 26th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3DV.1.43
2890 - 2895
ISBN: 3-936338-27-2
Paper DOI: 10.4229/26thEUPVSEC2011-3DV.1.43
0,00 EUR
Document(s): paper


Formation and crystallization of homogeneous CuAlSe2 (CAS) thin films prepared by a two stage process consisting on the selenization of evaporated metallic precursor layers has been achieved onto Sb:SnO2 (ATO)-coated glass substrates. Influence on the structural, optical, morphological and compositional properties of the sample thickness and selenization conditions have been analyzed. Polycrystalline CuAlSe2 samples with chalcopyrite structure and a preferential orientation along the (112) plane have been obtained on ATO-coated substrates, in a wide range of thicknesses and Se amounts, with high degree of reproducibility. Average crystallite size tends to increase and the preferential orientation remains constant with the increase of the CAS thickness and the Se amount in the selenization process. The band gap energy has ranged between 2.4-2.5 eV. XPS measurements have shown a homogeneous distribution of Cu and Al that remains almost constant in depth, and a more heterogeneous distribution of Se along the CAS sample. The CAS/ATO contacts have exhibited ohmic characteristics in all cases.