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Wafering Performance of Structured Wire in Correlation to the Wire Geometry
R. Koepge, K. Buehler, F. Kaule, S. Schoenfelder, O. Anspach
Silicon Cells
Subtopic: Feedstock, Crystallisation, Wafering, Defect Engineering
Event: 35th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2AV.1.24
515 - 521
ISBN: 3-936338-50-7
Paper DOI: 10.4229/35thEUPVSEC20182018-2AV.1.24
0,00 EUR
Document(s): paper, poster


Nowadays two main multi wire wafering technologies are established, the loose and the fixed abrasive process. The latter process, which is known as diamond wire technology, seems to dominate the market compared to the conventional slurry based wafering process over the next years. However, over the last years the usage of structured wire within the slurry based process was established and a significant decrease of process time and consumable’s consumption was achieved. In this study an extensive DoE was performed for a closer investigation of these process parameter correlations. The structured wire diameter, the silicon carbide (SiC) particle size and the table speed were varied which results in a complex process behavior. Additionally, wire samples are analyzed by a high resolution topography measurement with a specific analysis software. The wire data are correlated to the wafering performance for each parameter setup. Twenty-seven process configurations are investigated. In conclusion, the best setup for an optimum of wafering performance is detected as well as a correlation to the wire structure.