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Wide Bandgap Pure Sulfide CIGS Layers for Si/CIGS Tandem Cells from Metal Coevaporation Engineering and Sulfur Annealing
A. Crossay, H. Gloaguen, D. Cammilleri, J. Lontchi, A. Rebai, N. Barreau, D. Lincot
CIGS, Tandem Solar Cell, Cu(In,Ga)S2, Silicon
Perovskites and Other Non-Silicon Materials and Devices, Multijunctions/Tandems
Subtopic: Tandems
Event: 38th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3BV.2.62
505 - 507
ISBN: 3-936338-78-7
Paper DOI: 10.4229/EUPVSEC20212021-3BV.2.62
0,00 EUR
Document(s): paper, poster


Recent improvements in wide bandgap Cu(In,Ga)S2 (CIGSu) solar cells efficiencies [1, 2] confirm the potential of tandem silicon/CIGSu solar cells. In this work, the deposition of pure sulfide wide gap CIGSu on silicon via a two-step method is investigated. Cu, In and Ga are deposited by the highly versatile coevaporation process, which enables to engineer the properties of the metallic films prior to sulfurization. Power conversion efficiencies of 7.5% with a CdS buffer layer and 6.5% with a Zn(O,S) buffer layer were achieved with this method on standard glass/Mo substrates. On silicon substrates, the effects of (co)deposition sequence of the metals were investigated, and show a strong influence on the morphology of the layers after sulfurization. This study validates the relevance of using this coevaporation-based two-step deposition method for the investigation of CIGSu deposition on silicon for tandem solar cells.