Title:	Wet-Chemical Ozone-Based Silicon Oxide Layers and Electron-Beam Evaporated Silicon Layers for Passivating Contacts
Author(s):	N. Nicholson, J. Frisch, M. Nuys, U. Breuer, M. Jaber, J. Kleesiek, D. Amkreutz, L. Korte, S. Albrecht, B. Rech
Keywords:	Doping, SiO2, Passivating
Topic:	Silicon Materials and Cells
Subtopic:	High Temperature Route for Si Cells
Event:	8th World Conference on Photovoltaic Energy Conversion
Session:	1AO.6.6
Pages:	40 - 43
ISBN:	3-936338-86-8
Paper DOI:	10.4229/WCPEC-82022-1AO.6.6
Price:	0,00 EUR
Document(s):	paper, presentation

Abstract/Summary:

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We investigate TOPCon-like passivating contacts using silicon from electron-beam evaporation (E-Beam evaporation), plasma doping and wet-chemical ozone oxides. Results show iVoc values up to 722 mV for symmetrical lifetime samples and 708 mV for cells using the passivating contact on the rear side. SIMS measurements were performed on samples before and after annealing to investigate the distribution of phosphorous within the samples for different process conditions. Synchrotron-based XPS measurements were performed to investigate compositional changes both for the as-grown oxide and after poly-Si formation and etch-back of the poly-Si layer. A clear decrease in the intensity of the transitional area can be observed between non-annealed and annealed samples, which is assumed to be the reason for the non-existent surface passivation quality of freshly grown silicon oxide layers.