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Wide-Gap p-µc-Si1-xOx:H Films and their Application to Hetero-Junction Microcrystalline Silicon Solar Cells
T. Krajangsang, L. Zhang, I.A. Yunaz, S. Miyajima, M. Konagai
Heterojunction, PECVD, Simulation, Silicon Solar Cell(s), Thin Film (TF)
Thin Film Solar Cells
Subtopic: Amorphous and Microcrystalline Silicon Solar Cells
Event: 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain
Session: 3AV.1.11
2915 - 2918
ISBN: 3-936338-26-4
Paper DOI: 10.4229/25thEUPVSEC2010-3AV.1.11
0,00 EUR
Document(s): paper


Optimization of p-type hydrogenated microcrystalline silicon oxide thin films (p-µc-Si1-xOx:H) by RFPECVD 13.56 MHz method for use as a p-layer of hetero-junction µc-Si:H solar cells was performed. The properties of p-µc-Si1-xOx:H films were characterized by conductivity, activation energy, Raman scattering spectroscopy, and spectroscopic ellipsometry. The wide-gap p-µc-Si1-xOx:H were optimized by CO2/SiH4 ratio and H2/SiH4 dilution effect. Besides, we also investigated effects of wide-gap p-µc-Si1-xOx:H layer on the performance of hetero-junction µc-Si:H solar cells with various optical band gap of p-layer. We observed that a wide-gap p-µc-Si1-xOx:H is effective to improve the open circuit voltage of the solar cells. These results indicate that wide-gap p-µc-Si1-xOx:H is promising for use as window layer in hetero-junction µc-Si:H solar cells.