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ZnTe:O Intermediate Band Material Preparation by Molecular Beam Epitaxy and Ion Implantation
C. Liu, N. Tang, A. Ren, W. Li, L. Wu, J. Zhang, B. Li, L. Feng
Polycrystalline, Intermediate Band, Ion Implantation, Molecular Beam Epitaxy, ZnTe:O
New Materials and Concepts for Solar Cells and Modules
Subtopic: New Materials and Concepts for Cells
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 1BV.6.9
212 - 217
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-1BV.6.9
0,00 EUR
Document(s): paper, poster


Highly mismatched alloy of ZnTe:O for intermediate band solar cell application was conventionally prepared by in-situ molecular beam epitaxy alloying, or ion implantation into ZnTe single crystal wafer. In this study, an unique method to realize ZnTe:O intermediate band material was employed, combing ZnTe molecular beam epitaxy and subsequent oxygen ion implantation and final laser pulse ablation. Oxygen band related emissions had been observed from laser pulse annealed ZnTe:O films. Poly-crystalline ZnTe also showed potential for intermediate band solar cell application.