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Physical Device Simulation of Dopant-Free Silicon Solar Cell Based on Hole-Selective Molybdenum Oxide and Electron-Selective Titanium Oxide
H. Mehmood, H. Nasser, T. Tauqeer, R. Turan
Silicon Cells
Subtopic: Characterisation & Simulation Methods for Si Cells
Event: 35th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.26
ISBN: 3-936338-50-7
0,00 EUR
Document(s): poster


Substituting the defective and doped amorphous silicon (a-Si:H) with hole-selective molybdenum oxide (MoOx, x<3) and electron-selective titanium dioxide (TiOx, x<2) thin films can assist in eliminating the optical and electrical losses associated with doped a-Si:H usually utilized in silicon heterojunction solar cells. The photovoltaic performance of the carrier selective silicon heterojunction solar cell featuring intrinsic a-Si:H/MoOx hole selective and passivation stack as a window layer and intrinsic a-Si:H/TiOx electron selective and passivation rear stack layer has been numerically analysed by evaluating the work function of MoOx and electron affinity of TiOx. The simulated results exhibited Voc of 708 mV, Jsc of 39.1 mA/cm2, FF of 81.9%, and photon conversion efficiency () of 22.6% for n-type wafer with doping concentration of 1×1015 cm-3.