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Title:
 
CuInGaSe2/CdS Thin Film Solar Cells Made by New Precursors Prepared by Sputtering
 
Author(s):
 
N. Romeo, A. Bosio, A. Romeo, D. Menossi, S. Mazzamuto, F. Piccinelli, M. Bettinelli
 
Keywords:
 
Sputtering, CIGS, Thin Film Solar Cell
 
Topic:
 
Thin Films Solar Cells
Subtopic: CIS and Other (II-VI) Ternary Thin Film Solar Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 3BV.5.20
 
Pages:
 
2930 - 2932
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-3BV.5.20
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


CuInGaSe2/CdS thin film solar cells have been prepared by using only sputtering and selenization in a Se vapour. First of all, a precursor for the formation of a thin film of CuInSe2 is prepared on a one inch square soda-lime glass by sputtering in sequence Mo, In2Se3 and Cu. The staked layers are annealed at 400°C for half an hour and then selenized at 530°C for 10 minutes. In this way, a uniform CuInSe2 film is obtained. In order to get a CuInGaSe2 film, an alloy of Cu-Ga is deposited by sputtering on top of CuInSe2 and the stacked CuInSe2/Cu-Ga is selenized at 530°C for 10 minutes. Solar cells are prepared by depositing in sequence CdS, intrinsic ZnO and Al-doped ZnO. 14% uniform efficiencies on 1 inch square area are easily obtained. Since this process uses only sputtering and selenization techniques, it is suitable to be scaled-up to large area production.