Title:	CuInGaSe2/CdS Thin Film Solar Cells Made by New Precursors Prepared by Sputtering
Author(s):	N. Romeo, A. Bosio, A. Romeo, D. Menossi, S. Mazzamuto, F. Piccinelli, M. Bettinelli
Keywords:	Sputtering, CIGS, Thin Film Solar Cell
Topic:	Thin Films Solar Cells
Subtopic:	CIS and Other (II-VI) Ternary Thin Film Solar Cells
Event:	24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session:	3BV.5.20
Pages:	2930 - 2932
ISBN:	3-936338-25-6
Paper DOI:	10.4229/24thEUPVSEC2009-3BV.5.20
Price:	0,00 EUR
Document(s):	paper

Abstract/Summary:

---

CuInGaSe2/CdS thin film solar cells have been prepared by using only sputtering and selenization in a Se vapour. First of all, a precursor for the formation of a thin film of CuInSe2 is prepared on a one inch square soda-lime glass by sputtering in sequence Mo, In2Se3 and Cu. The staked layers are annealed at 400°C for half an hour and then selenized at 530°C for 10 minutes. In this way, a uniform CuInSe2 film is obtained. In order to get a CuInGaSe2 film, an alloy of Cu-Ga is deposited by sputtering on top of CuInSe2 and the stacked CuInSe2/Cu-Ga is selenized at 530°C for 10 minutes. Solar cells are prepared by depositing in sequence CdS, intrinsic ZnO and Al-doped ZnO. 14% uniform efficiencies on 1 inch square area are easily obtained. Since this process uses only sputtering and selenization techniques, it is suitable to be scaled-up to large area production.