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CuInGaSe2/CdS Thin Film Solar Cells Made by New Precursors Prepared by Sputtering
N. Romeo, A. Bosio, A. Romeo, D. Menossi, S. Mazzamuto, F. Piccinelli, M. Bettinelli
Sputtering, CIGS, Thin Film Solar Cell
Thin Films Solar Cells
Subtopic: CIS and Other (II-VI) Ternary Thin Film Solar Cells
Event: 24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany
Session: 3BV.5.20
2930 - 2932
ISBN: 3-936338-25-6
Paper DOI: 10.4229/24thEUPVSEC2009-3BV.5.20
0,00 EUR
Document(s): paper


CuInGaSe2/CdS thin film solar cells have been prepared by using only sputtering and selenization in a Se vapour. First of all, a precursor for the formation of a thin film of CuInSe2 is prepared on a one inch square soda-lime glass by sputtering in sequence Mo, In2Se3 and Cu. The staked layers are annealed at 400°C for half an hour and then selenized at 530°C for 10 minutes. In this way, a uniform CuInSe2 film is obtained. In order to get a CuInGaSe2 film, an alloy of Cu-Ga is deposited by sputtering on top of CuInSe2 and the stacked CuInSe2/Cu-Ga is selenized at 530°C for 10 minutes. Solar cells are prepared by depositing in sequence CdS, intrinsic ZnO and Al-doped ZnO. 14% uniform efficiencies on 1 inch square area are easily obtained. Since this process uses only sputtering and selenization techniques, it is suitable to be scaled-up to large area production.