login

Search documents

Browse topics

Document details

 
Title:
 
Influence of the Host Pin Diode Material in Multi-Quantum Well Solar Cells
 
Author(s):
 
A. Delamarre, Y. Wang, K. Watanabe, Y. Nakano, M. Sugiyama, J.F. Guillemoles
 
Keywords:
 
Photoluminescence, Quantum Well, Electroluminescence, Characterisation, Characterization
 
Topic:
 
NEW MATERIALS AND CONCEPTS FOR SOLAR CELLS AND MODULES
Subtopic: New Materials and Concepts for cells
Event: 31st European Photovoltaic Solar Energy Conference and Exhibition
Session: 1AO.3.3
 
Pages:
 
48 - 51
ISBN: 3-936338-39-6
Paper DOI: 10.4229/EUPVSEC20152015-1AO.3.3
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Multi-Quantum Well (MQW) solar cells are devices intended for use as single junction or within multijunction cells, and presenting interestingly large open-circuit voltages. However, due to their particular band structure, complex transport properties are involved. In this contribution, the influence of the host pin material (either GaAs or InGaP) is investigated. For the InGaP case, extremely high open-circuit voltages are observed, larger than what could be expected from a detailed balance argument. We explain this behavior by reduced hole transport properties under forward voltage, so that the MQW contribution to the recombination is reduced. Nevertheless, as seen on the external quantum efficiency, the MQW are active at short circuit, allowing increased current by absorption below the bandgap of the host material.