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A Study on the Influence of Aluminum Oxide Layer Properties on Contact Formation
B. Gapp, F. Geml, J. Engelhardt, G. Hahn
Contact, CVD Based Deposition, Screen Printing, PERT
Silicon Materials and Cells
Subtopic: High Temperature Route for Si Cells
Event: 37th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.23
525 - 528
ISBN: 3-936338-73-6
Paper DOI: 10.4229/EUPVSEC20202020-2DV.3.23
0,00 EUR
Document(s): paper


We present an investigation of the contact formation through the widely used passivation layer stack comprised of aluminum oxide (AlOx) and silicon nitride (SiNy:H). The influence of different aluminum oxide layers deposited by either atmospheric pressure chemical vapor deposition (APCVD) or atomic layer deposition (ALD) on contact formation of screen printed silver contact paste on boron emitters is shown. Excellent contact resistivities below 1 mΩcm2 are achieved for both AlOx deposition methods. For APCVD based layers, the contact resistivity is independent of the layer thickness within the investigated range of (8...25) nm. Scanning electron microscopy is used to determine and qualitatively examine silver crystallite formation beneath screen printed silver contacts.