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Crack Distribution and Strength of Silicon Wafers Considering the Crystallographic Orientation of the Silicon Ingot in Diamond Wire Sawing Process
C. Klute, R. Köpge, S. Schoenfelder
Silicon (Si), Strength, Wafer, Cracks, Diamond Wire Sawing, Crystallographic Orientation
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Feedstock, Crystallisation and Wafering
Event: 32nd European Photovoltaic Solar Energy Conference and Exhibition
Session: 2DV.3.28
1057 - 1060
ISBN: 3-936338-41-8
Paper DOI: 10.4229/EUPVSEC20162016-2DV.3.28
0,00 EUR
Document(s): paper, poster


The mechanical properties and the failure of silicon wafers are defined by surface defects, like cracks. In the wire sawing process different wire types and particle sizes as well as the machine settings affects the quality of the wafer surface. In order to optimize wire sawing technologies the influence of the crystallographic orientation on the strength and crack distribution of silicon wafers is investigated in this work. By ball-on-ring-tests the fracture strength of different orientations was determined and compared to the crack distribution, which was investigated by bevel polished method. The results show that a rotation of the silicon crystal by 45° (<110> direction) leads to an increase of the crack density in the surface of the samples and a decrease in the fracture strength of the wafers in comparisons to the standard sawing orientation (<100> direction).