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Title:
 
Coplanar Conductance Measurements and Modeling to Characterize Surface Passivation of c-Si Wafers by a-Si:H
 
Author(s):
 
I.P. Sobkowicz, P. Chatterjee, M.E. Gueunier-Farret, A. Salomon, J.-P. Kleider, P. Roca i Cabarrocas
 
Keywords:
 
Heterojunction, Inversion-Layer, Passivation, Modelling / Modeling
 
Topic:
 
WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Subtopic: Silicon Solar Cell Characterisation and Modelling
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.4.10
 
Pages:
 
1680 - 1685
ISBN: 3-936338-33-7
Paper DOI: 10.4229/28thEUPVSEC2013-2CV.4.10
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


Passivation of c-Si wafers has become a crucial technological challenge within the past few years, with the race for higher efficiencies of heterojunction solar cells and the development of alternative front and rear passivation layers for homojunction solar cells. Passivation is directly related to the defect density at the interface between the substrate and the passivating layer. One way to characterize its properties is to measure the effective lifetime of the photogenerated carriers. This can be done by e.g. the photoconductance decay method. High lifetimes directly imply a low defect density and in this case, we can expect the dangling bonds on the c-Si surface to be efficiently saturated by Si and H atoms coming from the passivating layer (a-Si:H in our case). Nevertheless, this method requires an entirely passivated wafer, whether it is a symmetrical stack or a cell structure, thus doubling the manufacturing time for any passivation test and preventing from studying the impact of a particular layer. We present a way of getting to the interface defect density and to an estimation of the passivating properties of a single-side a-Si:H-passivated (n)c-Si wafer, through coplanar conductance measurements.