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Title:
 
Fault Identification in Crystalline Silicon PV Modules by Complementary Analysis of the Light and Dark Current-Voltage Characteristics
 
Author(s):
 
S. Spataru, D. Sera, P. Hacke, T. Kerekes, R. Teodorescu, F.V. Nica, P.D. Burlacu, P. Diaz Reigosa
 
Keywords:
 
Degradation, Series Resistance, Cell Cracking, Fault identification, Dark I-V characteristic
 
Topic:
 
OPERATIONS, PERFORMANCE AND RELIABILITY OF PHOTOVOLTAICS (from Cells to Systems)
Subtopic: PV Modules
Event: 29th European Photovoltaic Solar Energy Conference and Exhibition
Session: 5CO.16.3
 
Pages:
 
2407 - 2418
ISBN: 3-936338-34-5
Paper DOI: 10.4229/EUPVSEC20142014-5CO.16.3
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


This article proposes a fault identification method, based on the complementary analysis of the light and dark current-voltage (I-V) characteristics of the photovoltaic (PV) module, to distinguish between four important degradation modes that lead to power loss in PV modules: (a) degradation of the electrical circuit of the PV module (cell interconnect breaks; corrosion of the junction box, module cables and connectors); (b) mechanical damage to the solar cells (cell microcracks and fractures); (c) potential-induced degradation (PID) sustained by the module; and (d) optical losses affecting the module (soiling, shading, discoloration). The premise of the method that is proposed is that different degradation modes affect the light and dark I-V characteristics of the PV module in different ways, leaving distinct signatures. This work focuses on identifying and correlating these specific signatures present in the light and dark I-V measurements, to specific degradation modes; a number of new dark I-V diagnostic parameters are proposed to quantify these signatures. The experimental results show that these dark I-V diagnostic parameters, complemented by light I-V performance and series resistance measurements can accurately detect and identify the four degradation modes discussed.