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Title:
 
A Passivated Rear Contact for High-Efficiency n-Type Si Solar Cells Enabling High Voc's and FF>82 %
 
Author(s):
 
F. Feldmann, M. Bivour, C. Reichel, M. Hermle, S.W. Glunz
 
Keywords:
 
Passivation, Silicon Solar Cell(s), n-Type, High Efficiency
 
Topic:
 
WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Subtopic: Silicon Solar Cell Improvements
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CO.4.4
 
Pages:
 
988 - 992
ISBN: 3-936338-33-7
Paper DOI: 10.4229/28thEUPVSEC2013-2CO.4.4
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Due to the improvements in material quality and surface passivation, high-efficiency solar cells are often limited by the recombination at the metal semiconductor contacts. As a solution to this problem, Swanson proposed “to put a heterojunction with a band-gap larger than silicon between the metal and silicon”[1] also known as passivated contact. In this work, a tunnel oxide passivated contact (TOPCon) structure allowing both an excellent surface passivation and an effective carrier transport is presented. High-efficiency n-type solar cells featuring this novel passivated rear contact instead of a point contact structure at the rear side yield a maximum efficiency of 23.7 %, a FF of 82.2 % and a Voc of 703 mV.