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Title:
 
HF-HNO3-H2SO4-Mixtures for Etching Multicrystalline Silicon Wafers: Etching Rates, Bath Analytics and Surface Texture
 
Author(s):
 
M. Lippold, E. Kroke
 
Keywords:
 
Etching, Recycling, Texturisation, Texturization, Multicrystalline-Silicon
 
Topic:
 
Wafer-based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Solar Cell Improvements
Event: 26th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2BV.3.70
 
Pages:
 
1800 - 1802
ISBN: 3-936338-27-2
Paper DOI: 10.4229/26thEUPVSEC2011-2BV.3.70
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


In this study the influence of sulfuric acid on the frequently-used HF-HNO3-H2O silicon etching system is investigated. Silicon etching rates are strongly affected by sulfuric acid. Raman and UV/Vis spectroscopy turned out to be very useful for etch bath analytics. Nitrous acid HNO2 and nitrosyl ions NO+ were identified as intermediates in HF-HNO3-based etching mixtures. Laser scanning microscopy was performed to characterize etched silicon surfaces. Etched surface morphologies depend on sulfuric acid concentrations. Nitronium ion containing mixtures generate rough and porous surfaces.