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Direct Deposition of µc-Si Films with APCVD on Borosilicate Glass
T. Rachow, M. Künle, S. Janz, S. Reber
Epitaxy, Thin Film (TF), µc-Si, Si-Deposition, Chemical Vapor Deposition
Thin Film Solar Cells
Subtopic: Thin Film Crystalline Silicon Solar Cells
Event: 26th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3AV.3.7
2770 - 2774
ISBN: 3-936338-27-2
Paper DOI: 10.4229/26thEUPVSEC2011-3AV.3.7
0,00 EUR
Document(s): paper


The rapid thermal direct deposition of microcrystalline silicon (μc-Si) films on BSG and other substrates is presented in this paper. The potential of crystalline Silicon Thin-Film (cSiTF) solar cells to reduce material cost and to reach competitive efficiencies has been proven by the development of various concepts like the epitaxial wafer equivalent (EpiWE) or cell concepts based on recrystallised silicon films. With only a small fraction of expensive high-purity silicon these concepts still achieve efficiencies up to 16.9% [1,2]. Other promising concepts are the cSiTF solar cells on glass substrates or in general substrates with a low critical exposure temperature. CSG Solar AG presented a plasma enhanced chemical vapour deposition (PECVD) based minimodule on borosilicate glass (BSG) with an efficiency of 10.4% [3]. The direct deposition by atmospheric pressure chemical vapour deposition (APCVD) at temperatures between 800 °C and 1050 °C presents significant advantages compared to the throughput limiting and expensive PECVD process in combination with solid phase crystallisation (SPC) or electron beam crystallisation (EBC).