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HF-H2O2-H2O- Mixtures for Cleaning Solar Grade-Silicon: Removal of Metal Contaminations with HnO3-Free Etching Solutions
C. Gondek, M. Lippold, I. Röver, E. Kroke
Environmental Effect, Etching, Recycling, Multicrystalline-Silicon
Components for PV Systems
Subtopic: Environmental Impacts, Recycling and Waste Management
Event: 26th European Photovoltaic Solar Energy Conference and Exhibition
Session: 4AV.3.55
3818 - 3821
ISBN: 3-936338-27-2
Paper DOI: 10.4229/26thEUPVSEC2011-4AV.3.55
0,00 EUR
Document(s): paper


In the present study, the nitric acid-free etching system HF-H2O2-H2O is investigated. The reactivity towards multicrystalline silicon is discussed over a wide concentration range, especially for high concentrations of hydrogen peroxide and hydrofluoric acid, and with respect to the rate-determining step in silicon dissolution kinetics. The resulting silicon surface is characterized by SEM measurement and IR spectroscopy. For low contaminated silicon material, HF-H2O2-H2O-mixtures effectively remove metal impurities. The decomposition of hydrogen peroxide is studied to gain information on the chemical stability of hydrogen peroxide in the etching mixture and towards silicon surfaces. Possible applications for the more environmental-friendly etching-system are given.