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Dopant Profiles of Laser-Doped Multicrystalline Silicon Wafers from Electrochemical Capacitance-Voltage Measurements
M. Heinrich, H. Hidayat, Z. Hameiri, B. Hoex, A.G. Aberle
Doping, Laser Processing, Selective Emitter, Solar Cell, Characterisation, Characterization
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Silicon Solar Cell Characterization and Modelling
Event: 27th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2AV.6.34
1285 - 1288
ISBN: 3-936338-28-0
Paper DOI: 10.4229/27thEUPVSEC2012-2AV.6.34
0,00 EUR
Document(s): paper


An accurate method is described for determining dopant profiles of laser-doped areas on multicrystalline silicon wafers from electrochemical capacitance-voltage measurements. The method is based on the calibration of dopant profiles using the combination of contact area and depth measurements of the etched area and is extended to uneven (i.e. textured) surfaces. The contact area is obtained by geometrical measurements and surface area factor measurements. The total etch depth is obtained by subtracting height profiles before and after etching. The calibrated dopant profiles are compared to secondary ion mass spectrometry measurements and found to be in excellent agreement.