login

Search documents

Browse topics

Document details

 
Title:
 
Development of Highly Stable and Efficient Amorphous Silicon Based Solar Cells
 
Author(s):
 
T. Matsui, H. Sai, T. Suezaki, M. Matsumoto, K. Saito, I. Yoshida, M. Kondo
 
Keywords:
 
Degradation, PECVD, Stability, Amorphous Silicon (a-Si), Solar Cell Efficiency
 
Topic:
 
THIN FILM SOLAR CELLS
Subtopic: Silicon-based Thin Film Solar Cells
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 3DO.7.2
 
Pages:
 
2213 - 2217
ISBN: 3-936338-33-7
Paper DOI: 10.4229/28thEUPVSEC2013-3DO.7.2
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


The suppression of the light-induced degradation of a-Si:H is one of the biggest challenges to make significant progress in thin-film solar cells. In this contribution, we report on recent developments of highly stable and efficient a-Si:H solar cells whose absorber layers were grown by a remote plasma process using a triode PECVD technique. Although the deposition rate is relatively low (0.01-0.05 nm/s) compared to the conventional diode-type PECVD process (~0.2 nm/s), the light-induced degradation in conversion efficiency (/ini) is substantially reduced. As a result, stabilized efficiencies of nearly 10% are obtained over the wide range of absorber layer thicknesses (ti~150-390 nm). An a-Si:H single-junction p-i-n solar cell (ti~220 nm, area: 0.999 cm2) with a stabilized efficiency of 10.11% has been confirmed by Calibration, Standards and Measurement Team of AIST. This solar cell shows relative efficiency degradation of 11% under AM1.5G 100 mW/cm2 illumination at cell temperature of 50 °C for 1000 h.