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Title:
 
Novel Approach to In-Line PL Imaging for Passivation Inspection of Silicon PV
 
Author(s):
 
F. Korsós, Z. Kiss, G. Nádudvari, A. Zsovár, M. Wilson, P. Edelman, J. Lagowski, J. Chen, L. Zhao, C. Zhou, W. Wang, B. Wang
 
Topic:
 
WAFER-BASED SILICON SOLAR CELLS AND MATERIALS TECHNOLOGY
Subtopic: Silicon Solar Cell Characterisation and Modelling
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 2CV.4.6
 
Pages:
 
1655 - 1658
ISBN: 3-936338-33-7
Paper DOI: 10.4229/28thEUPVSEC2013-2CV.4.6
 
Price:
 
 
0,00 EUR
 
Document(s): paper, poster
 

Abstract/Summary:


We report on progress regarding a new and very effective approach for in-line surface passivation inspection with PL imaging based on our recently introduced single PL image concept. The details of this novel inline PL technique are introduced and it’s applicability as a process inspection tool in fabrication of advanced solar cells is demonstrated. Methodology examples are provided using heterojunction structures, especially promising for high-efficiency cells. It is shown that beyond the observation that the raw PL images themselves are suitable for high resolution visualization of passivation defects using direct parameter calibration by QSS-μPCD technique, the PL images can be converted to emitter saturation current (J0e) and implied Voc images. Accuracy of our in-line PL imaging technique is investigated by comparing raw PL counts images to the conventional and widely used 2D camera based stationary PL imaging techniques, and comparing calculated in-line PL based J0e and implied Voc images to the J0e and implied Voc images determined by the quasi-steady-state light biased differential lifetime based QSS-μPCD technique. Both comparative tests show excellent agreement among the applied techniques confirming not only the practical advantages but also the accuracy of the in-line PL imaging technique.