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Title:
 
Permanent Deactivation of the Boron-Oxygen Recombination Center in Silicon Solar Cells
 
Author(s):
 
B. Lim, S. Hermann, K. Bothe, J. Schmidt, R. Brendel
 
Keywords:
 
Czochralski (Cz), Defects, Modelling / Modeling, High Efficiency
 
Topic:
 
Wafer-Based Silicon Solar Cells and Materials Technology
Subtopic: Mono- and Multicrystalline Silicon Cells and Materials, Processing Technology of
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 2AO.2.2
 
Pages:
 
1018 - 1022
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-2AO.2.2
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


The permanent deactivation of the recombination-active boron-oxygen complex, which consists of one substitutional boron atom and one interstitial oxygen dimer, in boron-doped Czochralski-grown silicon is demonstrated on low-resistivity lifetime samples as well as on high-efficiency RISE-EWT (Rear Interdigitated Single Evaporation Emitter Wrap-Through) solar cells. Furthermore, we describe a model capable of explaining the time dependence of the lifetime evolution during the deactivation process, introducing a second defect reaction which results in the binding of the oxygen dimer in a recombination-inactive complex. The application of the deactivation procedure to RISE-EWT solar cells results in an increase of the stabilized energy conversion efficiency from 19.1 % to 20.3 %.