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Title:
 
Raising the Efficiency Ceiling With Multijunction III-V Concentrator Photovoltaics
 
Author(s):
 
R. King, A. Boca, K.M. Edmondson, M.J. Romero, H. Yoon, D.C. Law, C. Fetzer, M. Haddad, A. Zakaria, W. Hong, S. Mesropian, D.D. Krut, G.S. Kinsey, P. Pien, R. Sherif, N. Karam
 
Keywords:
 
III-V Semiconductor, Gallium Arsenide Based Cells, Multijunction Solar Cell, High Efficiency, Concentrator Cell/s
 
Topic:
 
Advanced Photovoltaics
Subtopic: Terrestrial Concentrator Systems
Event: 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain
Session: 1BP.2.1
 
Pages:
 
24 - 29
ISBN: 3-936338-24-8
Paper DOI: 10.4229/23rdEUPVSEC2008-1BP.2.1
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


In this paper, we look at the question "how high can solar cell efficiency go?" from both theoretical and experimental perspectives. First-principle efficiency limits are analyzed for some of the main candidates for high-efficiency multijunction terrestrial concentrator cells. Many of these cell designs use lattice-mismatched, or metamorphic semiconductor materials in order to tune subcell band gaps to the solar spectrum. Minority-carrier recombination at dislocations is characterized in GaInAs inverted metamorphic solar cells, with band gap ranging from 1.4 to 0.84 eV, by light I-V, electron-beam-induced current (EBIC), and cathodoluminescence (CL). Metamorphic solar cells with a 3-junction GaInP/ GaInAs/ Ge structure were the first cells to reach over 40% efficiency, with an independently confirmed efficiency of 40.7% (AM1.5D, low-AOD, 240 suns, 25°C). The high efficiency of present III-V multijunction cells now in high-volume production, and still higher efficiencies of nextgeneration cells, is strongly leveraging for low-cost terrestrial concentrator PV systems.