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Title:
 
Simulations of Indium Arsenide / Gallium Antimonide Superlattice Barrier Based Thermophotovoltaic Cells
 
Author(s):
 
D. DeMeo, A. Licht, C.M. Shemelya, J.-M. Masur, R. Rehm, M. Walther, T.E. Vandervelde
 
Keywords:
 
Heterojunction, Recombination, Thermophotovoltaics, III-V Semiconductors
 
Topic:
 
MATERIAL STUDIES, NEW CONCEPTS, ULTRA-HIGH EFFICIENCY AND SPACE TECHNOLOGY
Subtopic: New Materials and Concepts for Cells
Event: 28th European Photovoltaic Solar Energy Conference and Exhibition
Session: 1AV.2.43
 
Pages:
 
365 - 368
ISBN: 3-936338-33-7
Paper DOI: 10.4229/28thEUPVSEC2013-1AV.2.43
 
Price:
 
 
0,00 EUR
 
Document(s): paper
 

Abstract/Summary:


Thermophotovoltaic (TPV) cells are semiconductor devices which convert radiated heat directly into electricity. This work investigates extending the operational wavelength of such devices into the long-wavelength infrared regime. Specifically, this work explores the use a barrier layer inserted into a p-n junction to suppress recombination pathways. Dark current simulations have been performed comparing a heterojunction barrier case with a typical p-n junction. Doping levels were varied to adjust the size of the space charge region of the junction and simulate the effect of different barrier widths within the depletion region.